I’m currently on a career sabbatical while living in Kuala Lumpur and writing for IEEE Power Electronics Magazine – view my author profile here. Previously I was an Applications Engineer at Wolfspeed (Durham, NC), and a Systems Engineer at both Wolfspeed and Texas Instruments (Dallas, TX). I received my BS in Electrical Engineering from Rose-Hulman Institute of Technology, and my MS and PhD degrees in Electrical Engineering from the University of Texas at Austin. I taught yoga from 2012-2019 after completing my 200hr teacher training with Yandara Yoga, given a talk at SXSW on self-driving cars, and served on the board of High-Tech High Heels, a non-profit based in North Texas. 


Featured article (from IEEE Power Electronics Magazine, Dec 2023 issue):
On the Shoulders of Silicon Giants: How SiC is Ramping Capacity, and Where Si Fits in

Abstract: You don’t have to be a power electronics engineer to know that the last few years have been a busy time for the silicon carbide (SiC) power industry. Since Wolfspeed, based in Durham, NC, USA, announced plans to build the world’s first 200-mm device fab (opened last year in Marcy, NY, USA), many manufacturers are following suit. Adding new lines that run bigger wafers will help suppliers meet exploding demands for electric vehicles (EVs), power supplies, and other green energy applications, but it’s not just the bigger wafers that will get more devices out the door. Process control improvements and device innovations learned from silicon (Si) will also help manufacturers get the most out of the pricier SiC wafers. However, don’t write off high-voltage Si just yet—super-junction MOSFETs (SJ-MOS) and insulated-gate bipolar transistors (IGBTs) are still very relevant to the markets they serve… (click here to continue reading for free)